SSM3J327F - Toshiba Semiconductor

SSM3J327F Silicon P-Channel MOSFET

SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 242 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 170 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 125 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 95 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1.

Features

may cause this product to decrease in the JEITA TOSHIBA SC-59 2-3F1F reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 12 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 bo.