SSM3J305T - Toshiba Semiconductor

SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • • 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain p.

Features

tions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: JEDEC JEITA TOSHIBA ― ― 2-3S1A Weight: 10 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain
  –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Cha.