www.DataSheet4U.com RJK5026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1852-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C.
• Low on-resistance
• Low leakage current
• High speed switching REJ03G1852-0100 Rev.1.00 Oct 26, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ .
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---|---|---|---|---|
1 | RJK5026DPP |
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Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK5026DPP-E0 |
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MOS FET | |
3 | RJK5026DPP-M0 |
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4 | RJK5020DPK |
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5 | RJK5002DJE |
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6 | RJK5003DPD |
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7 | RJK5009DPP |
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Silicon N Channel Power MOS FET | |
8 | RJK5012DPE |
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Silicon N Channel MOS FET High Speed Power Switching | |
9 | RJK5012DPP |
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10 | RJK5012DPP-A0 |
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MOSFET | |
11 | RJK5012DPP-E0 |
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MOS FET | |
12 | RJK5013DPE |
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Silicon N Channel Power MOS FET |