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Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012
Outline
RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5012DPP-A0 |
Renesas |
MOSFET | |
2 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
3 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK5013DPE |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | RJK5013DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK5014DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK5014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK5014DPP-E0 |
Renesas |
MOSFET | |
10 | RJK5015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK5015DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK5018DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |