RJK5020DPK - Renesas Technology

RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching

www.DataSheet4U.com RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0200 Rev.2.00 Dec 19, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item.

Features

• Low on-resistance
• Low leakage current
• High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch .