www.DataSheet4U.com RJK5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1488-0200 Rev.2.00 Nov 29, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | RJK5013DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | RJK5012DPP-A0 |
Renesas |
MOSFET | |
6 | RJK5012DPP-E0 |
Renesas |
MOS FET | |
7 | RJK5014DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK5014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK5014DPP-E0 |
Renesas |
MOSFET | |
10 | RJK5015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK5015DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK5018DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |