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RJK5026DPE |
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| Part Number | RJK5026DPE |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | www.DataSheet4U.com RJK5026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1852-0100 Rev.1.00 Oct 26, 2009 Ou... |
| Features |
• Low on-resistance • Low leakage current • High speed switching REJ03G1852-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ ... |
| Document |
 RJK5026DPE Data Sheet
PDF 100.81KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK5026DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 2 | RJK5026DPP-E0 |
Renesas |
MOS FET |
|
| 3 | RJK5026DPP-M0 |
Renesas |
N-Channel MOSFET |
|
| 4 | RJK5020DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | RJK5002DJE |
Renesas Technology |
High Speed Power Switching MOS FET |
|