RJK5002DJE - Renesas Technology

RJK5002DJE High Speed Power Switching MOS FET

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Features

 Low on-state resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
 High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID Note1 ID(pulse) Note3 IDR Note1 IDR(pulse) Note3 Pch Note 2 Channel to ambient thermal Impedance ch-a Channel temperature Tch Storage temperature Tstg Notes: 1. Limite.