of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
2 | RJK5012DPP-A0 |
Renesas |
MOSFET | |
3 | RJK5012DPP-E0 |
Renesas |
MOS FET | |
4 | RJK5013DPE |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | RJK5013DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK5014DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK5014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK5014DPP-E0 |
Renesas |
MOSFET | |
10 | RJK5015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK5015DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK5018DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |