RJK5012DPP-A0 500V - 12A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1427EJ0100 Rev.1.00 Jun.11.2020 1. Gate .
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
D
12 3
G S
Datasheet
R07DS1427EJ0100 Rev.1.00
Jun.11.2020
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
30
V
Drain current
ID Notes4
12
A
Drain peak current
ID (pulse)Notes1
24
A
Body-drain diode reverse drain current
IDR
12
A
Body-drain diod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5012DPP-E0 |
Renesas |
MOS FET | |
2 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
3 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK5013DPE |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK5013DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | RJK5013DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | RJK5014DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | RJK5014DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK5014DPP-E0 |
Renesas |
MOSFET | |
10 | RJK5015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK5015DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | RJK5018DPK |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |