RJK5026DPP - Renesas Technology

RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching

www.DataSheet4U.com RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain .

Features

• Low on-resistance
• Low leakage current
• High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 15.