RJK5026DPP-E0 - Renesas

RJK5026DPP-E0 MOS FET

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Features

 Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage te.