MTE016N15E3 - Cystech Electonics

MTE016N15E3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 BVDSS Features • Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS co.

Features

• Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTE016N15E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/.