MTE011N10RE3 - Cystech Electonics

MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RE3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10.

Features

 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for.