MTE015N10QH8 - Cystech Electonics

MTE015N10QH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=20A 100 V 39 A 8.8A 12.6 mΩ Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead pl.

Features

• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package Symbol MTE015N10QH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE015N10QH8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MT.