MTE013N08H8 - Cystech Electonics

MTE013N08H8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C161H8 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE013N08H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 80V 40A 10.5A 9.1 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic .

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package Symbol MTE013N08H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTE013N08H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE013N08H8 CYStek Pro.