MTE011N10RFP - Cystech Electonics

MTE011N10RFP N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RFP BVDSS Features ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C  Low On Resistance RDS(ON)@VGS=10V, ID=11A  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Insula.

Features

ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
 Low On Resistance RDS(ON)@VGS=10V, ID=11A
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Insulating package, front/back side insulating voltage=2500V(AC)
 RoHS compliant package 100V 34A 9A 11 mΩ(typ) Symbol MTE011N10RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produc.