MTE015N15RE3 - Cystech Electonics

MTE015N15RE3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE015N15RE3 BVDSS ID@VGS=10V, TC=25°C Features RDS(ON)@VGS=10V, ID=30A • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plati.

Features

RDS(ON)@VGS=10V, ID=30A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package 150V 90A 16mΩ (typ) Symbol MTE015N15RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE015N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, z.