MTE015N15RFP - Cystech Electonics

MTE015N15RFP N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE015N15RFP Spec. No. : C838FP Issued Date : 2016.11.21 Revised Date : 2017.01.04 Page No. : 1/ 8 Features BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=30A  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Insulating package, front/back si.

Features

BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=30A
 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Insulating package, front/back side insulating voltage=2500V(AC)
 RoHS compliant package 150V 50A 16 mΩ(typ) Symbol MTE015N15RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE015N15RFP-0-UB-X TO-220FP (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pa.