MTE013N08E3 - Cystech Electonics

MTE013N08E3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C161E3 Issued Date : 2016.01.17 Revised Date : 2016.02.19 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE013N08E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compl.

Features

RDS(ON)@VGS=10V, ID=20A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE013N08E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE013N08E3 C.