MTE011N10RJ3 - Cystech Electonics

MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V,.

Features

 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE011N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 250.