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MTE016N15E3 |
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| Part Number | MTE016N15E3 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 BVDSS Features • Low Gate Charge ID@VGS=10V... |
| Features |
• Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTE016N15E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/... |
| Document |
 MTE016N15E3 Data Sheet
PDF 343.65KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTE010N10E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
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| 2 | MTE010N10F3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTE010N10FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTE011N10RE3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTE011N10RFP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
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