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MTE013N08E3 |
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| Part Number | MTE013N08E3 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. Spec. No. : C161E3 Issued Date : 2016.01.17 Revised Date : 2016.02.19 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE013N08E3 BVDSS ID@VGS=10V, TC=25°C ID@VG... |
| Features |
RDS(ON)@VGS=10V, ID=20A
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE013N08E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE013N08E3 C... |
| Document |
 MTE013N08E3 Data Sheet
PDF 383.53KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | MTE013N08H8 |
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| 2 | MTE010N10E3 |
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| 3 | MTE010N10F3 |
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| 4 | MTE010N10FP |
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| 5 | MTE011N10RE3 |
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