MTB080P06N6 - Cystech Electonics

MTB080P06N6 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.7A -60V -3.8A -3.0A 79mΩ 107mΩ Features • Simple drive requirement • Low on-resistance • Smal.

Features

• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Ts.