MTB010A03H8 - CYStech

MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB010A03H8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS.

Features

 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A 30V 36A 23A 8.8A 7.0A 7.3mΩ(typ) 9.6mΩ(typ) Equivalent Circuit MTB010A03H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A03H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS .