CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (.
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
-60V -3.3A 90mΩ (typ) 117mΩ (typ)
Equivalent Circuit
MTB080P06L3
G:Gate D:Drain S:Source
Outline
SOT-223
D
S D G
Ordering Information
Device MTB080P06L3-0-T3-G
Package
SOT-223 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06L3
CYStek Product S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB080P06J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
2 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
3 | MTB080P06N3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
4 | MTB080P06N6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
5 | MTB080P06Q8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
6 | MTB080C10Q8 |
Cystech Electonics |
N- and P-channel enhancement mode power MOSFET | |
7 | MTB080N15J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
8 | MTB08N04J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
9 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
10 | MTB001D01-1 |
CSOT |
LCD Module | |
11 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
12 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |