MTB010A06RH8 - CYStech

MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2020.01.17 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB010A06RH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=1.

Features

 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 38A 24A 14.2A 11.4A 12.4mΩ(typ) 32.0mΩ(typ) Equivalent Circuit MTB010A06RH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A06RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S fo.