CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A -60V -2.5A 80mΩ 109mΩ Features •Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free .
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTB080P06N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTB080P06N3
CYStek Pr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB080P06N6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
2 | MTB080P06J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
3 | MTB080P06L3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
4 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
5 | MTB080P06Q8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
6 | MTB080C10Q8 |
Cystech Electonics |
N- and P-channel enhancement mode power MOSFET | |
7 | MTB080N15J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
8 | MTB08N04J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
9 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
10 | MTB001D01-1 |
CSOT |
LCD Module | |
11 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
12 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |