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MTB080P06N6 |
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| Part Number | MTB080P06N6 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@V... |
| Features |
• Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Ts... |
| Document |
 MTB080P06N6 Data Sheet
PDF 464.75KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB080P06N3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
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| 2 | MTB080P06J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB080P06L3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB080P06Q8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
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