MTB080P06Q8 - Cystech Electonics

MTB080P06Q8 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06Q8 BVDSS ID@ VGS=-10V, TA=25°C RDSON @VGS=-10V, ID=-4A RDSON @VGS=-4.5V, ID=-3A -60V -4A 80.3mΩ(typ.) 108mΩ(typ.) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package Equivalent Circuit MTB080P06Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB080P06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB080P06Q8 CYStek Product Specification CYStech Electronics Cor.