MTB080N15J3 - CYStech

MTB080N15J3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB080N15J3 BVDSS 150V ID @VGS=10V, TC=25°C 18A RDS(ON)@VGS=10V, ID=10A 82.3mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-.

Features

• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package Equivalent Circuit MTB080N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB080N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080N15J3 CYStek Product Specification CYStech Electron.