MTB080C10Q8 - Cystech Electonics

MTB080C10Q8 N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 1/12 N- and P-channel enhancement mode power MOSFET MTB080C10Q8 BVDSS ID@VGS=10V(-10V), TA=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 100V 2.9A 74mΩ 90mΩ P-CH -100V -1.9A 174mΩ 195mΩ Features • Simple drive requirement • Low on-resistance • Fa.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit MTB080C10Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTB080C10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080C10Q8 CYSte.