MTB080P06M3 - Cystech Electonics

MTB080P06M3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.) Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating and halog.

Features

• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free lead plating and halogen-free package Symbol MTB080P06M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB080P06M3 CYStek Product Specification CYStech Electronics Cor.