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MTB080P06N3 |
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| Part Number | MTB080P06N3 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V,... |
| Features |
•Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB080P06N3 CYStek Pr... |
| Document |
 MTB080P06N3 Data Sheet
PDF 410.12KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB080P06N6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
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| 2 | MTB080P06J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB080P06L3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB080P06Q8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
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