IXFL38N100P - IXYS Corporation

IXFL38N100P Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL38N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 29A 230mΩ 300ns ISOPLUS i5-PakTM (HV) Test Con.

Features

z Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(<30pF) z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast Intrinsic Diode FC Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V.