IXFL38N100P IXYS Corporation Polar Power MOSFET HiPerFET Datasheet, en stock, prix

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IXFL38N100P

IXYS Corporation
IXFL38N100P
IXFL38N100P IXFL38N100P
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Part Number IXFL38N100P
Manufacturer IXYS Corporation
Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E...
Features z Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(<30pF) z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast Intrinsic Diode FC Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V...

Document Datasheet IXFL38N100P Data Sheet
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