IXFL38N100P |
Part Number | IXFL38N100P |
Manufacturer | IXYS Corporation |
Description | Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E... |
Features |
z
Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force
300 260 2500 3000 40..120/4.5..27 8
Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(<30pF) z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast Intrinsic Diode
FC Weight
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V... |
Document |
IXFL38N100P Data Sheet
PDF 147.19KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFL38N100Q2 |
IXYS |
HiPerFET Power MOSFET | |
2 | IXFL30N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
3 | IXFL32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
4 | IXFL34N100 |
IXYS Corporation |
HiPerFET Power MOSFET ISOPLUS264 | |
5 | IXFL36N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |