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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL44N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 22A 240mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continu.
G = Gate S = Source D = Drain
G S D
• Silicon chip on Direct-Copper-Bond
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substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier
FC Weight
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± .
IXFL44N100P - Littelfuse
IXFL44N100P 1000 V, 240 mΩ PolarTM HiPerFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (ISOPLUS i5-PakTM (HV)) Tab.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFL44N60 |
IXYS Corporation |
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| 2 | IXFL44N80 |
IXYS Corporation |
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| 3 | IXFL100N50P |
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| 4 | IXFL30N120P |
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| 5 | IXFL32N120P |
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| 6 | IXFL34N100 |
IXYS Corporation |
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| 7 | IXFL36N110P |
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| 8 | IXFL38N100P |
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| 9 | IXFL38N100Q2 |
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| 10 | IXFL39N90 |
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| 11 | IXFL60N60 |
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| 12 | IXFL60N80P |
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|