IXFL44N60 - IXYS Corporation

IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Contin.

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure www.DataSheet4U.net Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 8 g Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z z z Weight DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions Characteristic Valu.