PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 18A 380mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuo.
z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 15A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 200 V V nA z Easy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFL32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
2 | IXFL34N100 |
IXYS Corporation |
HiPerFET Power MOSFET ISOPLUS264 | |
3 | IXFL36N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
4 | IXFL38N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFL38N100Q2 |
IXYS |
HiPerFET Power MOSFET | |
6 | IXFL39N90 |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS264 | |
7 | IXFL100N50P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
8 | IXFL44N100P |
Littelfuse |
Power MOSFET | |
9 | IXFL44N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
10 | IXFL44N60 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
11 | IXFL44N80 |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS264 | |
12 | IXFL60N60 |
IXYS Corporation |
MOSFET |