IXFL100N50P - IXYS Corporation

IXFL100N50P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 100N50P VDSS ID25 = 500 V = 70 A RDS(on) ≤ 52 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to.

Features

l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s 300 2500 3000 28..150 / 6.4..30 5 l VISOL FC Weight V~ V~ N/lb g l l Advantages l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) .