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Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL32N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 24A 340mΩ 300ns ISOPLUS i5-PakTM Test Conditio.
z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 FC Weight Easy Assembly Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS , VGS = 0V Note 2, TJ .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFL30N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET |
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| 2 | IXFL34N100 |
IXYS Corporation |
HiPerFET Power MOSFET ISOPLUS264 |
|
| 3 | IXFL36N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
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| 4 | IXFL38N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
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| 5 | IXFL38N100Q2 |
IXYS |
HiPerFET Power MOSFET |
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| 6 | IXFL39N90 |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS264 |
|
| 7 | IXFL100N50P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |
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| 8 | IXFL44N100P |
Littelfuse |
Power MOSFET |
|
| 9 | IXFL44N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
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| 10 | IXFL44N60 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET |
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| 11 | IXFL44N80 |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS264 |
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| 12 | IXFL60N60 |
IXYS Corporation |
MOSFET |
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