IXFL44N80 - IXYS Corporation

IXFL44N80 HiPerFET Power MOSFETs ISOPLUS264

HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Test Conditions TJ = 25°C to 150°C TJ =.

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure TL 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 2500 3000 5 VISOL Weight Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 .