IXFL34N100 - IXYS Corporation

IXFL34N100 HiPerFET Power MOSFET ISOPLUS264

HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight www.DataSheet4U.net IXFL34N100 VDSS = ID25 = RDS(on) ≤ 1000V 30A 280mΩ ISOPLUS264 Test Conditions TJ = 25°C to .

Features

z G D S ISOLATED TAB G = Gate S = Source D = Drain 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 260 40..120 / 9..27 2500 3000 8 Silicon Chip on Direct-Copper Bond (DCB) Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z Low Drain to Tab Capacitance(<30pF) z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast intrinsic Rectifier Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C, Unl.