IXFL60N60 - IXYS Corporation

IXFL60N60 MOSFET

HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 60N60 (Electrically Isolated Backside) Single Die MOSFET VDSS ID25 RDS(on) = 600 V = 60 A = 80 mΩ Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD FC TJ TJM Tstg VISOL Md Weight Symbol VDSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 M.

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly z Space savings z High power density © 2003 IXYS All rights reserved DS99093(10/03) IXFL60N60 Symbol gfs Ciss Coss Crss td(on).