PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSheet4U.com RDS(on) trr = 300 V = 88 A = 40 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 .
z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 40 V V nA µA µA mΩ Easy to mount Space savings High power density VGS = 10 V, ID = 0..
PolarTM HiPerFETTM Power MOSFET IXFT88N30P IXFH88N30P IXFK88N30P VDSS ID25 trr RDS(on) = = ≤ ≤ 300V 88A 40mΩ 200ns .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK80N15Q |
IXYS Corporation |
(IXFx80N15Q) HiPerFET Power MOSFETs Q-Class | |
2 | IXFK80N20 |
IXYS |
Power MOSFETs | |
3 | IXFK80N20Q |
IXYS |
Power MOSFETs Q-Class | |
4 | IXFK80N50P |
IXYS |
PolarHV HiPerFET Power MOSFET | |
5 | IXFK80N50Q3 |
IXYS |
Power MOSFET | |
6 | IXFK80N65X2 |
IXYS |
Power MOSFET | |
7 | IXFK100N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
8 | IXFK100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
9 | IXFK100N65X2 |
IXYS |
Power MOSFET | |
10 | IXFK102N30P |
IXYS Corporation |
Polar MOSFETs | |
11 | IXFK105N07 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
12 | IXFK110N06 |
IXYS Corporation |
HiPerFET Power MOSFETs |