IXFK110N06 - IXYS Corporation

IXFK110N06 HiPerFET Power MOSFETs

www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ =.

Features

• International standard packages
• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier Applications
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• DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays Advantages
• Easy to mount
• Space savings
• High power density 92802I (10/97) 1.6 mm (0.063 in) from case for 10 s Mounting torq.