HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (Exter.
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 27 mΩ VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Applications l DC-DC converters l Battery chargers l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK100N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFK100N65X2 |
IXYS |
Power MOSFET | |
3 | IXFK102N30P |
IXYS Corporation |
Polar MOSFETs | |
4 | IXFK105N07 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFK110N06 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
6 | IXFK110N07 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
7 | IXFK120N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
8 | IXFK120N20P |
IXYS Corporation |
PolarHT HiPerFET Power MOSFET | |
9 | IXFK120N25 |
IXYS |
HiPerFET Power MOSFETs | |
10 | IXFK120N25P |
IXYS |
Power MOSFET | |
11 | IXFK120N30T |
IXYS |
GigaMOS Power MOSFET | |
12 | IXFK120N30T |
IXYS |
GigaMOS Power MOSFET |