IXFK80N15Q - IXYS Corporation

IXFK80N15Q (IXFx80N15Q) HiPerFET Power MOSFETs Q-Class

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient.

Features

l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 V V nA mA mA l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages l l l VGS = 10 V, ID = 0.5
• ID25 Pulse test, t £ 300 ms, duty .