IXFK80N20 - IXYS

IXFK80N20 Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 2.

Features

• International standard packages
• Molding epoxies meet UL 94 V-0 flammability classification
• Low RDS (on) HDMOSTM process
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 35 30 V V nA mA mA mW mW
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• DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS =.