IXFK80N65X2 - IXYS

IXFK80N65X2 Power MOSFET

X2-Class HiPerFETTM Power MOSFET IXFH80N65X2 IXFK80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse .

Features

 International Standard Packages
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 LAovwalaRnDcSh(OeN) RanadteQd G
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100673D(03/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitan.